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FEI Helios Nanolab G3 UC

EM Resolution
0,6 @ 30kV
EM Acceleration Voltage
500 V - 30 kV
EM Source
Schottky thermal field emitter
EDS
Optional
Focused Ion Beam
Type
FIB-SEM
Ion Gun
Ga Liquid Metal Ion Source
FIB Resolution
4 nm @ 30 kV (at coincident point, statistical method), 2.5 nm (selected edge method))
FIB Acceleration Voltage
0.5 - 30 kV
With highly valued sub-nm SEM imaging, the capability to produce ultra-thin samples for SEM/TEM, and the most precise prototyping capabilities, scientists choose the Helios NanoLab as their partner for innovating new materials and nanoscale devices that will influence future advancements.

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